Show
Sort by
-
- Journal Article
- A2
- open access
Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask
-
Study of amorphous Cu-Te-Si thin films showing high thermal stability for application as a cation supply layer in conductive bridge random access memory devices
-
Influence of alloying the copper supply layer on the retention of CBRAM
-
Improved thermal stability and retention properties of Cu-Te based CBRAM by Ge alloying
-
Combinatorial study of Ag-Te thin films and their application as cation supply layer in CBRAM cells
-
- Journal Article
- A1
- open access
Electronic properties of manganese impurities in germanium
-
- Conference Paper
- C3
- open access
Mn related defect levels in germanium
-
Influence of carbon content on the copper-telluride phase formation and on the resistive switching behavior of carbon alloyed Cu-Te conductive bridge random access memory cells
-
Conductive-AFM tomography for 3D filament observation in resistive switching devices
-
Optimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cells