Jan Musschoot

(2020) DE TIJD.

Conformality of thermal and plasma enhanced atomic layer deposition on a non-woven fibrous substrate

Jan Musschoot, Jolien Dendooven (UGent) , Davy Deduytsche (UGent) , Johan Haemers (UGent) , G Buyle and Christophe Detavernier (UGent)

(2012) SURFACE & COATINGS TECHNOLOGY. 206(22). p.4511-4517

Add to list

Atomic layer deposition of titanium and vanadium oxide on mesoporous silica and phenol/formaldehyde resins : the effect of the support on the liquid phase epoxidation of cyclohexene

Ilke Muylaert (UGent) , Jan Musschoot, Karen Leus (UGent) , Jolien Dendooven (UGent) , Christophe Detavernier (UGent) and Pascal Van Der Voort (UGent)

(2012) EUROPEAN JOURNAL OF INORGANIC CHEMISTRY. p.251-260

Add to list

Journal Article
A1
open access

The coordinatively saturated vanadium MIL-47 as a low leaching heterogeneous catalyst in the oxidation of cyclohexene

Karen Leus (UGent) , Matthias Vandichel (UGent) , Ying-Ya Liu (UGent) , Ilke Muylaert (UGent) , Jan Musschoot, Steven Pyl (UGent) , Henk Vrielinck (UGent) , Freddy Callens (UGent) , Guy Marin (UGent) , Christophe Detavernier (UGent) , et al.

(2012) JOURNAL OF CATALYSIS. 285(1). p.196-207

Add to list

PhD Thesis
open access

Advantages and challenges of plasma enhanced atomic layer deposition

Jan Musschoot

(2011)

Add to list

TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition

Qi Xie (UGent) , Davy Deduytsche (UGent) , Jan Musschoot, Roland Vanmeirhaeghe (UGent) , Christophe Detavernier (UGent) , Shao-Feng Ding and Xin-Ping Qu

(2011) MICROELECTRONIC ENGINEERING. 88(5). p.646-650

Add to list

Journal Article
A1
open access

TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer

Qi Xie (UGent) , Jan Musschoot, Marc Schaekers, Matty Caymax, Annelies Delabie, Dennis Lin, Xin-Ping Qu, Yu-Long Jiang, Sven Van den Berghe and Christophe Detavernier (UGent)

(2011) ELECTROCHEMICAL AND SOLID STATE LETTERS. 14(5). p.G27-G30

Add to list

Conference Paper
C3
open access

Conformality of Al2O3 deposited by thermal, plasma-enhanced and ozone-based atomic layer deposition

Jolien Dendooven (UGent) , Davy Deduytsche (UGent) , Jan Musschoot and Christophe Detavernier (UGent)

(2010) Atomic Layer Deposition, 10th International conference, Abstracts.

Add to list

Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Qi Xie (UGent) , Jan Musschoot, Marc Schaekers, Matty Caymax, Annelies Delabie, Xin-Ping Qu, Yy-Long Jiang, Sven Van den Berghe, JunHu Liu and Christophe Detavernier (UGent)

(2010) APPLIED PHYSICS LETTERS. 97(22).

Add to list

Texture of atomic layer deposited ruthenium

Jan Musschoot, Qi Xie (UGent) , Davy Deduytsche (UGent) , Koen De Keyser, Delphine Longrie (UGent) , Johan Haemers (UGent) , Sven Van den Berghe, Roland Van Meirhaeghe, Jan D'Haen and Christophe Detavernier (UGent)

(2010) MICROELECTRONIC ENGINEERING. 87(10). p.1879-1883

Academic Bibliography

Jan Musschoot

Mik met een relanceplan op vaste kosten en investeringen

Conformality of thermal and plasma enhanced atomic layer deposition on a non-woven fibrous substrate

Atomic layer deposition of titanium and vanadium oxide on mesoporous silica and phenol/formaldehyde resins : the effect of the support on the liquid phase epoxidation of cyclohexene

The coordinatively saturated vanadium MIL-47 as a low leaching heterogeneous catalyst in the oxidation of cyclohexene

Advantages and challenges of plasma enhanced atomic layer deposition

TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition

TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer

Conformality of Al2O3 deposited by thermal, plasma-enhanced and ozone-based atomic layer deposition

Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Texture of atomic layer deposited ruthenium

Contents

Support

Contact