prof. dr. Johan Lauwaert

Faculty of Engineering and Architecture > Department of Electronics and information systems

ORCID iD: 0000-0002-0757-2509

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- Journal Article
- A1
- open access
Optimization of optical absorption and transport layer effects on Perovskite/ACIGS tandem solar cells

Nour El I Boukortt (UGent) , Antonio Garcia Loureiro and Johan Lauwaert (UGent)

(2026) SOLAR ENERGY MATERIALS AND SOLAR CELLS. 295.
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Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs

Mojtaba Alaei (UGent) , Herbert De Pauw (UGent) , Elena Fabris, Stefaan Decoutere, Jan Doutreloigne (UGent) , Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(9). p.4817-4823
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Optimizing thin-film tandem solar cells : the impact of bandgap grading in ACIGS subcell on performance

Nour El I Boukortt (UGent) , Antonio Garcia Loureiro and Johan Lauwaert (UGent)

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(3). p.1197-1205
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- A1
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Back contact based T-CAD model for the N1-signal observed in capacitance spectroscopy in CIGS solar cells

Johan Lauwaert (UGent)

(2024) SOLAR ENERGY. 273.
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Multifaceted characterization methodology for understanding nonidealities in perovskite solar cells : a passivation case study

Jonathan Parion (UGent) , Santhosh Ramesh, Sownder Subramaniam, Henk Vrielinck (UGent) , Filip Duerinckx, Hariharsudan Sivaramakrishnan Radhakrishnan, Jef Poortmans, Johan Lauwaert (UGent) and Bart Vermang

(2024) SOLAR RRL. 8(21).
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- Conference Paper
- C3
- open access
Chalcogenides in direct Z-scheme junctions

Nithin Jacob (UGent) , Bart Vermang and Johan Lauwaert (UGent)

(2024) EMRS 2024 Fall Meeting, Abstracts.
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Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.5949-5955
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Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4563-4569
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- C3
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Direct Z-scheme junctions that could convert CO2 to Methanol

Nithin Jacob (UGent) , Johan Lauwaert (UGent) and Bart Vermang

(2024) MATSUS 2024, Abstracts.
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Compact model and detailed balance limit for a dual n-type direct Z-scheme heterojunction

Johan Lauwaert (UGent) and Nithin Jacob (UGent)

(2024) SMALL. 20(27).

Academic Bibliography

prof. dr. Johan Lauwaert

Optimization of optical absorption and transport layer effects on Perovskite/ACIGS tandem solar cells

Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs

Optimizing thin-film tandem solar cells : the impact of bandgap grading in ACIGS subcell on performance

Back contact based T-CAD model for the N1-signal observed in capacitance spectroscopy in CIGS solar cells

Multifaceted characterization methodology for understanding nonidealities in perovskite solar cells : a passivation case study

Chalcogenides in direct Z-scheme junctions

Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Direct Z-scheme junctions that could convert CO2 to Methanol

Compact model and detailed balance limit for a dual n-type direct Z-scheme heterojunction

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Optimization of optical absorption and transport layer effects on Perovskite/ACIGS tandem solar cells

Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs

Optimizing thin-film tandem solar cells : the impact of bandgap grading in ACIGS subcell on performance

Back contact based T-CAD model for the N1-signal observed in capacitance spectroscopy in CIGS solar cells

Multifaceted characterization methodology for understanding nonidealities in perovskite solar cells : a passivation case study

Chalcogenides in direct Z-scheme junctions​

Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Direct Z-scheme junctions that could convert CO2 to Methanol

Compact model and detailed balance limit for a dual n-type direct Z-scheme heterojunction

Chalcogenides in direct Z-scheme junctions