prof. dr. Johan Lauwaert

Faculty of Engineering and Architecture > Department of Electronics and information systems

ORCID iD: 0000-0002-0757-2509

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Chalcogenides in direct Z-scheme junctions

Nithin Jacob (UGent) , Bart Vermang and Johan Lauwaert (UGent)

(2024) EMRS 2024 Fall Meeting, Abstracts.
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- Journal Article
- A1
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Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.5949-5955
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Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4563-4569
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Direct Z-scheme junctions that could convert CO2 to Methanol

Nithin Jacob (UGent) , Johan Lauwaert (UGent) and Bart Vermang

(2024) MATSUS 2024, Abstracts.
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Compact model and detailed balance limit for a dual n-type direct Z-scheme heterojunction

Johan Lauwaert (UGent) and Nithin Jacob (UGent)

(2024) SMALL.
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Substrate network modeling for lateral p-GaN gate HEMTs in a 200V GAN-IC platform

Mojtaba Alaei (UGent) , Herbert De Pauw (UGent) , Urmimala Chatterjee, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2023) 2023 International Semiconductor Conference (CAS). In CAS Proceedings p.143-146
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Fill factor loss in a recombination junction for monolithic tandem solar cells

Johan Lauwaert (UGent)

(2023) ACS APPLIED ENERGY MATERIALS. 6(8). p.4211-4218
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Numerical device modeling for direct Z-scheme junctions using a solar cell simulator

Nithin Jacob (UGent) , Jeroen Lauwaert (UGent) , Bart Vermang and Johan Lauwaert (UGent)

(2023) SOLAR ENERGY. 259. p.320-327
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Optimizing solar-assisted industrial heating and cooling system for cost-effective installation

Yacob Hiben, Mulu Bayray and Johan Lauwaert (UGent)

(2023) APPLIED THERMAL ENGINEERING. 230(Part B).
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Numerical device modelling of direct Z-scheme heterojunctions using solar cell simulator (SCAPS)

Nithin Jacob (UGent) , Jeroen Lauwaert (UGent) , Bart Vermang and Johan Lauwaert (UGent)

(2022) ICOOPMA-EuroDIM 2022, Abstracts.

Academic Bibliography

prof. dr. Johan Lauwaert

Chalcogenides in direct Z-scheme junctions

Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Direct Z-scheme junctions that could convert CO2 to Methanol

Compact model and detailed balance limit for a dual n-type direct Z-scheme heterojunction

Substrate network modeling for lateral p-GaN gate HEMTs in a 200V GAN-IC platform

Fill factor loss in a recombination junction for monolithic tandem solar cells

Numerical device modeling for direct Z-scheme junctions using a solar cell simulator

Optimizing solar-assisted industrial heating and cooling system for cost-effective installation

Numerical device modelling of direct Z-scheme heterojunctions using solar cell simulator (SCAPS)

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Chalcogenides in direct Z-scheme junctions​

Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Direct Z-scheme junctions that could convert CO2 to Methanol

Compact model and detailed balance limit for a dual n-type direct Z-scheme heterojunction

Substrate network modeling for lateral p-GaN gate HEMTs in a 200V GAN-IC platform

Fill factor loss in a recombination junction for monolithic tandem solar cells

Numerical device modeling for direct Z-scheme junctions using a solar cell simulator

Optimizing solar-assisted industrial heating and cooling system for cost-effective installation

Numerical device modelling of direct Z-scheme heterojunctions using solar cell simulator (SCAPS)

Chalcogenides in direct Z-scheme junctions