prof. dr. Benoit Bakeroot
- Work address
-
Technologiepark Zwijnaarde 126
9052 Zwijnaarde - Benoit.Bakeroot@UGent.be
- ORCID iD
-
0000-0003-4392-1777
Show
Sort by
-
The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs
-
High threshold voltage enhancement-mode regrown p-GaN gate HEMTs with a robust forward time-dependent gate breakdown stability
-
- Journal Article
- A1
- open access
Compact modeling of nonideal trapping/detrapping processes in GaN power devices
-
Study and characterization of GaN MOS capacitors : planar vs trench topographies
-
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
-
200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
-
Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology
-
Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy
-
High-temperature time-dependent gate breakdown of p-GaN HEMTs
-
ON-state reliability of GaN-on-Si Schottky Barrier Diodes : Si3N4 vs. Al2O3/SiO2 GET dielectric