prof. dr. Benoit Bakeroot
- Work address
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Technologiepark Zwijnaarde 126
9052 Zwijnaarde - Benoit.Bakeroot@UGent.be
- ORCID iD
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0000-0003-4392-1777
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TCAD Modeling of the Dynamic $V_{TH}$ Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
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Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology
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Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy
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High-temperature time-dependent gate breakdown of p-GaN HEMTs
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ON-state reliability of GaN-on-Si Schottky Barrier Diodes : Si3N4 vs. Al2O3/SiO2 GET dielectric
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- Journal Article
- A1
- open access
Surface-potential-based compact modeling of p-GaN gate HEMTs
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Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs
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- Journal Article
- A1
- open access
Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization
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- Journal Article
- A1
- open access
Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs
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- Journal Article
- A1
- open access
Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells