prof. dr. Benoit Bakeroot
- ORCID iD
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0000-0003-4392-1777
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Time-Dependent Conduction Mechanisms in Superlattice Layers on 200 mm Engineered Substrates
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Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
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1200 V p-GaN HEMTs on engineered polycrystalline AlN Substrates
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GaN power devices on 200 mm engineered substrates
(2024) -
P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime
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Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates
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Electrical Stability of MOS Structures With AlON and Al<sub>2</sub>O<sub>3</sub> Dielectrics Deposited on n-and p-Type GaN
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- Journal Article
- A1
- open access
Toward understanding the failure mechanism in p-GaN gate HEMTs operating in reverse conduction diode mode
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Enhancing the Forward Gate Bias Robustness in p-GaN Gate High-Electron-Mobility Transistors through Doping Profile Engineering
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1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates