Academic Bibliography

Search 200 years of publications by Ghent University researchers.

prof. dr. Benoit Bakeroot

Faculty of Engineering and Architecture > Department of Electronics and information systems

Work address: Technologiepark Zwijnaarde 126
9052 Zwijnaarde
Email: Benoit.Bakeroot@UGent.be
ORCID iD: 0000-0003-4392-1777

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The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs

M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna and A. N. Tallarico

(2022) IEEE ELECTRON DEVICE LETTERS. 43(11). p.1846-1849
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High threshold voltage enhancement-mode regrown p-GaN gate HEMTs with a robust forward time-dependent gate breakdown stability

Shun-Wei Tang, Zhen-Hong Huang, Szu-Chia Chen, Wei-Syuan Lin, Brice de Jaeger, Dirk Wellekens, Matteo Borga, Benoit Bakeroot (UGent) , Stefaan Decoutere and Tian-Li Wu

(2022) IEEE ELECTRON DEVICE LETTERS. 43(10). p.1625-1628
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- Journal Article
- A1
- open access
Compact modeling of nonideal trapping/detrapping processes in GaN power devices

N. Modolo, C. De Santi, Giulio Baratella (UGent) , A. Bettini, M. Borga, N. Posthuma, Benoit Bakeroot (UGent) , S. You, S. Decoutere, A. Bevilacqua, et al.

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(8). p.4432-4437
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Study and characterization of GaN MOS capacitors : planar vs trench topographies

K. Mukherjee, C. De Santi, S. You, K. Geens, M. Borga, S. Decoutere, Benoit Bakeroot (UGent) , P. Diehle, F. Altmann, G. Meneghesso, et al.

(2022) APPLIED PHYSICS LETTERS. 120(14).
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TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

A. N. Tallarico, M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and C. Fiegna

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(2). p.507-513
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200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs

T. Cosnier, O. Syshchyk, B. De Jaeger, K. Geens, D. Cingu, Elena Fabris, M. Borga, A. Vohra, M. Zhao, Benoit Bakeroot (UGent) , et al.

(2021) 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting
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Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology

Jethro Oroceo Gallardo, Brice De Jaeger, Sachidananda Dash, Shun-Wei Tang, Thanh Nga Tran, Dirk Wellekens, Benoit Bakeroot (UGent) , Stefaan Decoutere and Tian-Li Wu

(2021) 2021 IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA). In IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
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Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy

Po-Chun Hsu, Eddy Simoen (UGent) , Hu Liang, Brice De Jaeger, Benoit Bakeroot (UGent) , Dirk Wellekens and Stefaan Decoutere

(2021) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 218(23).
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High-temperature time-dependent gate breakdown of p-GaN HEMTs

M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, Benoit Bakeroot (UGent) , S. Decoutere and A. N. Tallarico

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(11). p.5701-5706
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ON-state reliability of GaN-on-Si Schottky Barrier Diodes : Si3N4 vs. Al2O3/SiO2 GET dielectric

Eliana Acurio, Lionel Trojman, Brice de Jaeger, Benoit Bakeroot (UGent) and Stefaan Decoutere

(2021) 2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium

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