prof. dr. Benoit Bakeroot
- Work address
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Technologiepark Zwijnaarde 126
9052 Zwijnaarde - Benoit.Bakeroot@UGent.be
- ORCID iD
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0000-0003-4392-1777
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Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications
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Trading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate
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Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability
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Gate reliability of p-GaN HEMT with gate metal retraction
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Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI
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Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs
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Influence of GaN- and Si3N4-passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
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The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors
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The influence of carbon in the back-barrier layers on the surface electric field peaks in GaN Schottky diodes
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On the origin of the leakage current in p-gate AlGaN/GaN HEMTs