Academic Bibliography

Search 200 years of publications by Ghent University researchers.

prof. dr. Benoit Bakeroot

Faculty of Engineering and Architecture > Department of Electronics and information systems

Work address: Technologiepark Zwijnaarde 126
9052 Zwijnaarde
Email: Benoit.Bakeroot@UGent.be
ORCID iD: 0000-0003-4392-1777

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Integration of 650 V GaN power ICs on 200 mm engineered substrates

Xiangdong Li, Karen Geens, Dirk Wellekens, Ming Zhao, Alessandro Magnani, Nooshin Amirifar, Benoit Bakeroot (UGent) , Shuzhen You, Dirk Fahle, Herwig Hahn, et al.

(2020) IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING. 33(4). p.534-538
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- Journal Article
- A1
- open access
Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability

Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot (UGent) , Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini

(2020) MATERIALS. 13(21).
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Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate

A. N. Tallarico, N. E. Posthuma, Benoit Bakeroot (UGent) , S. Decoutere, E. Sangiorgi and C. Fiegna

(2020) MICROELECTRONICS RELIABILITY. 114(SI).
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Exploration of gate trench module for vertical GaN devices

M. Ruzzarin, K. Geens, M. Borga, H. Liang, S. You, Benoit Bakeroot (UGent) , S. Decoutere, C. De Santi, A. Neviani, M. Meneghini, et al.

(2020) MICROELECTRONICS RELIABILITY. 114(SI).
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- Journal Article
- A1
- open access
Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors

Filip Wach, Michael J. Uren, Benoit Bakeroot (UGent) , Ming Zhao, Stefaan Decoutere and Martin Kuball

(2020) IEEE ELECTRON DEVICE LETTERS. 41(12). p.1754-1757
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- A1
- open access
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

Matteo Borga, Kalparupa Mukherjee, Carlo De Santi, Steve Stoffels, Karen Geens, Shuzhen You, Benoit Bakeroot (UGent) , Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, et al.

(2020) APPLIED PHYSICS EXPRESS. 13(2).
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- Journal Article
- A1
- open access
Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization

Xiangdong Li, Benoit Bakeroot (UGent) , Zhicheng Wu, Nooshin Amirifar, Shuzhen You, Niels Posthuma, Ming Zhao, Hu Liang, Guido Groeseneken and Stefaan Decoutere

(2020) IEEE ELECTRON DEVICE LETTERS. 41(4). p.577-580
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- Journal Article
- A1
- open access
Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs

Jie Wang, Zhanfei Chen, Shuzhen You, Wenyong Zhou, Benoit Bakeroot (UGent) , Jun Liu, Lingling Sun and Stefaan Decoutere

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(9). p.3564-3567
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Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications

Matteo Borga, Carlo De Santi, S. Stoffels, Benoit Bakeroot (UGent) , Xiangdong Li, M. Zhao, M. Van Hove, S. Decoutere, Gaudenzio Meneghesso, Matteo Meneghini, et al.

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(2). p.595-599
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GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion

X. Li, N; Amirifar, K. Geens, M. Zhao, W. Guo, H. Liang, S. You, N. Posthuma, B. De Jaeger, S. Stoffels, et al.

(2019) 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting

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