ereprof. dr. Paul Clauws
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Fabrication of SOI layers on high resistivity silicon substrates
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The spin hamiltonian of thermal donors in germanium
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STUDY OF ELECTRICALLY ACTIVE LATTICE-DEFECTS IN CF-252 AND PROTON IRRADIATED SILICON DIODES.
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THE SPIN HAMILTONIAN OF THERMAL DONORS IN GERMANIUM.
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DLTS of nickel impurities in germanium.
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Deep-level transient spectroscopy of detector-grade high-resistivity float-zone silicon.
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1 MEV ELECTRON-IRRADIATION INDUCED DEGRADATION OF BORON-DOPED STRAINED SI1-XGEX LAYERS.
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Study of electrical damage in GaAs induced by SiCl4 reactive ion etching
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OBSERVATION OF SURFACE PHONONS ON THE (001) AND (100) SURFACES OF ANATASE MINERALS
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Bistability of thermal donors in germanium: assignment of far-infrared and electron-paramagnetic-resonance spectra