- Paul.Clauws@UGent.be
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Jan Vanhellemont : 35 years of materials research in microelectronics
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- Journal Article
- A1
- open access
Electronic properties of manganese impurities in germanium
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Kristallen verhelderd
Peter Van den haute (UGent) , Diederik Depla (UGent) , Dirk Poelman (UGent) , Paul Clauws (UGent) , Alexander Jonckheere (UGent) , Bernadette Lagae (UGent) , Kristel Wautier (UGent) and Danny Segers (UGent) -
- Journal Article
- A1
- open access
Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge
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- Conference Paper
- C3
- open access
Mn related defect levels in germanium
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Deep-level transient spectroscopy study of quenched-in defects in germanium
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- Journal Article
- A1
- open access
Temperature-independent slow carrier emission from deep-level defects in p-type germanium
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- Conference Paper
- C3
- open access
Tunnel emission from Co and Cr-related levels in p-type Ge
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Temperature independent slow hole emission from transition metal centers in germanium
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- Journal Article
- A1
- open access
Electronic properties of iron and cobalt impurity centres in germanium