Academic Bibliography

Search 200 years of publications by Ghent University researchers.

Mojtaba Alaei

Faculty of Engineering and Architecture > Department of Electronics and information systems

ORCID iD: 0000-0002-5815-3654

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- PhD Thesis
- open access
Compact modeling of gallium nitride power high-electron-mobility transistors

Mojtaba Alaei (UGent)

(2025)
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- Journal Article
- A1
- open access
Modeling and analysis of terminal capacitances in high-power devices : application to p-GaN gate HEMTs

Mojtaba Alaei (UGent) , Herbert De Pauw (UGent) , Elena Fabris, Stefaan Decoutere, Jan Doutreloigne (UGent) , Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2025) IEEE TRANSACTIONS ON ELECTRON DEVICES. 72(9). p.4817-4823
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- Journal Article
- A1
- open access
Extending electrostatic modeling for Schottky p-GaN gate HEMTs : uniform and engineered p-GaN doping

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.5949-5955
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- Journal Article
- A1
- open access
Modeling gate leakage current for p-GaN gate HEMTs with engineered doping profile

Mojtaba Alaei (UGent) , Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(8). p.4563-4569
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- Conference Paper
- C1
- open access
Substrate network modeling for lateral p-GaN gate HEMTs in a 200V GAN-IC platform

Mojtaba Alaei (UGent) , Herbert De Pauw (UGent) , Urmimala Chatterjee, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2023) 2023 International Semiconductor Conference (CAS). In CAS Proceedings p.143-146
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Modeling of short-channel effects in GaN HEMTs

Mojtaba Alaei (UGent) , Majid Shalchian and Farzan Jazaeri

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(8). p.3088-3094