Academic Bibliography

Search 200 years of publications by Ghent University researchers.

Walter Gonçalez Filho

Faculty of Engineering and Architecture > Department of Electronics and information systems

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Electrical stability of MOS structures with AlON and Al2O3 dielectrics deposited on n-and p-type GaN

Walter Gonçalez Filho (UGent) , Matteo Borga, Karen Geens, Md Arif Khan, Deepthi Cingu, Urmimala Chatterjee, Stefaan Decoutere, Werner Knaepen, Seda Kizir, Panagiota Arnou, et al.

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(9). p.5212-5217
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Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

Walter Gonçalez Filho (UGent) , Matteo Borga, Karen Geens, Md Arif Khan, Deepthi Cingu, Urmimala Chatterjee, Anurag Vohra, Stefaan Decoutere and Benoit Bakeroot (UGent)

(2024) APPLIED PHYSICS LETTERS. 124(11).
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- Journal Article
- A1
- open access
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

Walter Gonçalez Filho (UGent) , Matteo Borga, Karen Geens, Deepthi Cingu, Urmimala Chatterjee, Sourish Banerjee, Anurag Vohra, Han Han, Albert Minj, Herwig Hahn, et al.

(2023) SCIENTIFIC REPORTS. 13(1).
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High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps

D. Favero, A. Cavaliere, C. De Santi, M. Borga, Walter Gonçalez Filho (UGent) , K. Geens, Benoit Bakeroot (UGent) , S. Decoutere, G. Meneghesso, E. Zanoni, et al.

(2023) 2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS. In International reliability physics symposium
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- Conference Paper
- C3
Design and characterization of p-body layer of vertical GaN devices on engineered substrates

Matteo Borga, Walter Gonçalez Filho (UGent) , Karen Geens, Benoit Bakeroot (UGent) , Hu Liang and Stefaan Decoutere

(2022) International Workshop on Nitride Semiconductors (IWN 2022), Abstracts.