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Semiconductor-metal transition in thin VO2 films deposited by ozone based atomic layer deposition
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Improved thermal stability and electrical performance by using PEALD ultrathin Al2O3 film with Ta as Cu diffusion barrier on low k dielectrics
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Fermi level depinning failure for Al/GeO₂/Ge contacts
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Band alignment in Ge/GeOx/HfO₂/TiO₂ heterojunctions as measured by hard X-ray photoelectron spectroscopy
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Germanium surface passivation and atomic layer deposition of high-k dielectrics: a tutorial review on Ge-based MOS capacitors
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TaN/Ta as an effective diffusion barrier for direct contact of copper and NiSi
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- Conference Paper
- C3
- open access
Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition
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Annealing induced hysteresis suppression for TiN/HfO₂/GeON/p-Ge capacitor
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High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing
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The inhibition of enhanced Cu oxidation on ruthenium/diffusion barrier layers for Cu interconnects by carbon alloying into Ru
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Effective Schottky Barrier height modulation by an ultrathin passivation layer of GeOxNy for Al/n-Ge(100) contact
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- Conference Paper
- P1
- open access
Investigation of ultra-thin Al₂O₃ film as Cu diffusion barrier on low-k (k=2.5) dielectrics
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Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition
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Annealing effect on the metal gate effective work function modulation for the Al/TiN/SiO2/p-Si structure
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TaCN growth with PDMAT and H-2/Ar plasma by plasma enhanced atomic layer deposition
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ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems
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- Journal Article
- A1
- open access
Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O-2 plasma
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- Journal Article
- A1
- open access
TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer
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Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices
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Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer
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The effect of sputtered W-based carbide diffusion barriers on the thermal stability and void formation in copper thin films
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Texture of atomic layer deposited ruthenium
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The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction
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Ru thin film grown on TaN by plasma enhanced atomic layer deposition