Qi Xie
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Semiconductor-metal transition in thin VO2 films deposited by ozone based atomic layer deposition
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Improved thermal stability and electrical performance by using PEALD ultrathin Al2O3 film with Ta as Cu diffusion barrier on low k dielectrics
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Fermi level depinning failure for Al/GeO₂/Ge contacts
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Band alignment in Ge/GeOx/HfO₂/TiO₂ heterojunctions as measured by hard X-ray photoelectron spectroscopy
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Germanium surface passivation and atomic layer deposition of high-k dielectrics: a tutorial review on Ge-based MOS capacitors
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TaN/Ta as an effective diffusion barrier for direct contact of copper and NiSi
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- Conference Paper
- C3
- open access
Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition
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Annealing induced hysteresis suppression for TiN/HfO₂/GeON/p-Ge capacitor
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High-performance Ge MOS capacitors by O₂ plasma passivation and O₂ ambient annealing
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The inhibition of enhanced Cu oxidation on ruthenium/diffusion barrier layers for Cu interconnects by carbon alloying into Ru