Karl Opsomer

Journal Article
A2
open access

Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask

Meiyi Wu, Jean-Francois de Marneffe, Karl Opsomer (UGent) , Christophe Detavernier (UGent) , Annelies Delabie, Philipp Naujok, Oezge Caner, Andy Goodyear, Mike Cooke, Qais Saadeh, et al.

(2021) MICRO AND NANO ENGINEERING. 12.

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Study of amorphous Cu-Te-Si thin films showing high thermal stability for application as a cation supply layer in conductive bridge random access memory devices

Wouter Devulder (UGent) , Karl Opsomer (UGent) , Matthias Minjauw (UGent) , Johan Meersschaut, Malgorzata Jurczak, Ludovic Goux and Christophe Detavernier (UGent)

(2016) RSC ADVANCES. 6(38). p.32106-32114

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Influence of alloying the copper supply layer on the retention of CBRAM

Wouter Devulder (UGent) , Karl Opsomer (UGent) , Malgorzata Jurczak, Ludovic Goux and Christophe Detavernier (UGent)

(2015) 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM). p.215-218

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Improved thermal stability and retention properties of Cu-Te based CBRAM by Ge alloying

Wouter Devulder (UGent) , Karl Opsomer (UGent) , Geert Rampelberg (UGent) , Bob De Schutter (UGent) , Kilian Devloo-Casier (UGent) , Malgorzata Jurczak, Ludovic Goux and Christophe Detavernier (UGent)

(2015) JOURNAL OF MATERIALS CHEMISTRY C. 3(48). p.12469-12476

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Combinatorial study of Ag-Te thin films and their application as cation supply layer in CBRAM cells

Wouter Devulder (UGent) , Karl Opsomer (UGent) , Johan Meersschaut, Davy Deduytsche (UGent) , Malgorzata Jurczak, Ludovic Goux and Christophe Detavernier (UGent)

(2015) ACS COMBINATORIAL SCIENCE. 17(5). p.334-340

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Journal Article
A1
open access

Electronic properties of manganese impurities in germanium

Johan Lauwaert (UGent) , Siegfried Segers (UGent) , Filip Moens, Karl Opsomer (UGent) , Paul Clauws (UGent) , Freddy Callens (UGent) , Eddy Simoen (UGent) and Henk Vrielinck (UGent)

(2015) JOURNAL OF PHYSICS D-APPLIED PHYSICS. 48(17).

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Conference Paper
C3
open access

Mn related defect levels in germanium

Johan Lauwaert (UGent) , Filip Moens, Siegfried Segers (UGent) , Karl Opsomer (UGent) , Eddy Simoen (UGent) , Jan Vanhellemont (UGent) , Paul Clauws (UGent) , Freddy Callens (UGent) and Henk Vrielinck (UGent)

(2014) ECS and SMEQ Joint international meeting, Abstracts.

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Influence of carbon content on the copper-telluride phase formation and on the resistive switching behavior of carbon alloyed Cu-Te conductive bridge random access memory cells

Wouter Devulder (UGent) , Karl Opsomer (UGent) , Alexis Franquet, Johan Meersschaut, Attilio Belmonte, Robert Muller, Bob De Schutter (UGent) , Sven Van Elshocht, Malgorzata Jurczak, Ludovic Goux, et al.

(2014) JOURNAL OF APPLIED PHYSICS. 115(5).

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Conductive-AFM tomography for 3D filament observation in resistive switching devices

U Celano, L Goux, A Belmonte, A Schulze, Karl Opsomer (UGent) , Christophe Detavernier (UGent) , O Richard, H Bender, M Jurczak and W Vandervorst

(2013) 2013 IEEE international electron devices meeting (IEDM).

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Optimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cells

L Goux, W Kim, Karl Opsomer (UGent) , A Belmonte, G Kar, F De Stefano, VV Afanas'ev, U Celano, M Houssa, Wouter Devulder (UGent) , et al.

(2013) ECS Transactions. In ECS Transactions 58(7). p.175-180

Academic Bibliography

Karl Opsomer

Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask

Study of amorphous Cu-Te-Si thin films showing high thermal stability for application as a cation supply layer in conductive bridge random access memory devices

Influence of alloying the copper supply layer on the retention of CBRAM

Improved thermal stability and retention properties of Cu-Te based CBRAM by Ge alloying

Combinatorial study of Ag-Te thin films and their application as cation supply layer in CBRAM cells

Electronic properties of manganese impurities in germanium

Mn related defect levels in germanium

Influence of carbon content on the copper-telluride phase formation and on the resistive switching behavior of carbon alloyed Cu-Te conductive bridge random access memory cells

Conductive-AFM tomography for 3D filament observation in resistive switching devices

Optimization of W\Al2O3\Cu(-Te) material stack for high-performance conductive-bridging memory cells

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