prof. Jan Vanhellemont
No current affiliation with UGent
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High-throughput screening of extrinsic point defect properties in Si and Ge : database and applications
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Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices
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The Hakoniwa method, an approach to predict material properties based on statistical thermodynamics and ab initio calculations
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Microdefects modeling in germanium single crystals
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Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon
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In situ UHVEM study of {113}-defect formation in Si nanowires
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SiOx precipitate composition in Si, revisited : discussion closed?
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- Journal Article
- A1
- open access
Effect of dopant compensation on the behavior of dissolved iron and iron-boron related complexes in silicon
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Impact of dopants and silicon structure dimensions on {113}-defect formation during 2 MeV electron irradiation in an UHVEM
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Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing CZ-Si crystals