prof. Jan Vanhellemont
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Intrinsic point defect behavior close to silicon melt/solid interface
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- Journal Article
- A1
- open access
A statistical model describing temperature dependent gettering of Cu in p-type Si
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- Conference Paper
- C3
- open access
In situ UHVEM study of {113}-defect formation in Si nanowires
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- Journal Article
- A1
- open access
Estimation of the temperature dependent interaction between uncharged point defects in Si
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In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures
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Vacancies in Si and Ge
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- Journal Article
- A1
- open access
Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge
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Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon
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- Conference Paper
- C3
- open access
Mn related defect levels in germanium
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Stress and doping impact on intrinsic point defects in silicon and germanium