Zahia Bougrioua
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Evidence of an impurity band at an n-GaN/sapphire interface
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AlGaN/GaN HEMTS: material, processing, and characterization
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Improved AlGaN/GaN high electron mobility transistor using AlN interlayers
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Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN-GaNHEMT-like structures
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Minority carrier diffusion lengths in silicon doped gallium nitride thin films measured by Electron Beam Induced Current.
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Relation between microstructure and 2DEG properties of AlGaN/GaN structures.
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Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers.
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Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.3Ga0.69N.
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Influence of process technology on DC-performance of GaN-based HFETs.
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Fabrication and performance of AlGaN/GaN HEMTS.