Zahia Bougrioua
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- 2003
- Evidence of an impurity band at an n-GaN/sapphire interface
- AlGaN/GaN HEMTS: material, processing, and characterization
- Improved AlGaN/GaN high electron mobility transistor using AlN interlayers
- Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN-GaNHEMT-like structures
- 2002
- Minority carrier diffusion lengths in silicon doped gallium nitride thin films measured by Electron Beam Induced Current.
- Relation between microstructure and 2DEG properties of AlGaN/GaN structures.
- Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers.
- Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.3Ga0.69N.
- High power performances of AlGaN/GaN HEMTs on sapphire substrate at F = 4 GHz.
- Fabrication and performance of AlGaN/GaN HEMTS.