Academic Bibliography

Search 200 years of publications by Ghent University researchers.

Zahia Bougrioua

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Evidence of an impurity band at an n-GaN/sapphire interface

C Mavroidis, JJ Harris, RB Jackman, Zahia Bougrioua and Ingrid Moerman (UGent)

(2003) DIAMOND AND RELATED MATERIALS. 12(3-7). p.1127-1132
Mark
- journalArticle
- A1
AlGaN/GaN HEMTS: material, processing, and characterization

F CALLE, T PALACIOS, E MONROY, J GRAJAL, M VERDU, Zahia Bougrioua and Ingrid Moerman (UGent)

(2003) JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 14(5-7). p.271-277
Mark
- journalArticle
- A1
Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

A JIMENEZ, Zahia Bougrioua, JM TIRADO, AF BRANA, E CALLEJA, E MUNOZ and Ingrid Moerman (UGent)

(2003) APPLIED PHYSICS LETTERS. 82(26). p.4827-4829
Mark
- journalArticle
- A1
Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN-GaNHEMT-like structures

Zahia Bougrioua, Ingrid Moerman (UGent) , L NISTOR, B VAN DAELE, E MONROY, T PALACIOS, F CALLE and M LEROUX

(2003) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 195(1). p.93-100
Mark
- journalArticle
- A1
Minority carrier diffusion lengths in silicon doped gallium nitride thin films measured by Electron Beam Induced Current.

C GRAZZI, M ALBRECHT, HP STRUNK, Zahia Bougrioua and Ingrid Moerman (UGent)

(2002) GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY. 82-84. p.807-812
Mark
- journalArticle
- A1
Relation between microstructure and 2DEG properties of AlGaN/GaN structures.

B VAN DAELE, G VAN TENDELOO, M GERMAIN, Monique Leys, Zahia Bougrioua and Ingrid Moerman (UGent)

(2002) PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 234(3). p.830-834
Mark
- journalArticle
- A1
Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers.

C MAVROIDIS, JJ HARRIS, RB JACKMAN, I HARRISON, BJ ANSELL, Zahia Bougrioua and Ingrid Moerman (UGent)

(2002) JOURNAL OF APPLIED PHYSICS. 91(12). p.9835-9840
Mark
- journalArticle
- A1
Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.3Ga0.69N.

E MONROY, F CALLE, R RANCHAL, T PALACIOS, M VERDU, FJ SANCHEZ, MT MONTOJO, M EICKHOFF, F OMNES, Zahia Bougrioua, et al.

(2002) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 17(9) L47-L54).
Mark
- conference
- C1
High power performances of AlGaN/GaN HEMTs on sapphire substrate at F = 4 GHz.

N VELLAS, C GAQUIERE, Y GUHEL, M WERQUIN, D DUCATTEAU, B BBOUDART, JC DE JAEGER, Zahia Bougrioua, M GERMAIN, Monique Leys, et al.

(2002) Proceedings of the IEEE GaAs 2002 Conference, 23-24 September 2002, Milano, Italy. p.25-28
Mark
- conference
- C1
Fabrication and performance of AlGaN/GaN HEMTS.

F CALLE, T PALACIOS, E MONROY, J GRAJAL, JM TIRADO, A JIMENEZ, R RANCHAL, E MUNOZ, M VERDU, FJ SANCHEZ, et al.

(2002) 4th International Conference on Materials for Microelectronics and Nanoengineering, 10-1 June 2002, Espoo, Finland. p.25-28

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