prof. dr. Benoit Bakeroot

Conference Paper
C1
open access

Substrate network modeling for lateral p-GaN gate HEMTs in a 200V GAN-IC platform

Mojtaba Alaei (UGent) , Herbert De Pauw (UGent) , Urmimala Chatterjee, Stefaan Decoutere, Johan Lauwaert (UGent) and Benoit Bakeroot (UGent)

(2023) 2023 International Semiconductor Conference (CAS). In CAS Proceedings p.143-146

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Journal Article

Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

D. Favero, C. De Santi, K. Mukherjee, M. Borga, K. Geens, U. Chatterjee, Benoit Bakeroot (UGent) , S. Decoutere, F. Rampazzo, G. Meneghesso, et al.

(2022) MICROELECTRONICS RELIABILITY. 138.

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Journal Article

Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

N. Modolo, M. Fregolent, F. Masin, A. Benato, A. Bettini, M. Buffolo, C. De Santi, M. Borga, N. Posthuma, Benoit Bakeroot (UGent) , et al.

(2022) MICROELECTRONICS RELIABILITY. 138.

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Journal Article

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs

D. Favero, C. De Santi, K. Mukherjee, K. Geens, M. Borga, Benoit Bakeroot (UGent) , S. You, S. Decoutere, G. Meneghesso, E. Zanoni, et al.

(2022) 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium

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Journal Article

Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits

Olga Syshchyk, Thibault Cosnier, Zheng-Hong Huang, Deepthi Cingu, Dirk Wellekens, Anurag Vohra, Karen Geens, Pavan Vudumula, Urmimala Chatterjee, Stefaan Decoutere, et al.

(2022) ESSDERC 2022 - IEEE 52ND EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC). In Proceedings of the European Solid-State Device Research Conference p.245-248

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Journal Article

Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

Oroceo Gallardo, Sachidananda Dash, [missing] Thanh Nga Tran, Zhen-Hong Huang, Shun-Wei Tang, Dirk Wellekens, Benoit Bakeroot (UGent) , Olga Syshchyk, Brice De Jaeger, Stefaan Decoutere, et al.

(2022) MICROELECTRONICS RELIABILITY. 134.

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Conference Paper

Gate reliability of p-GaN power HEMTs under pulsed stress condition

M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna and A. N. Tallarico

(2022) 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium

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The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs

M. Millesimo, M. Borga, Benoit Bakeroot (UGent) , N. Posthuma, S. Decoutere, E. Sangiorgi, C. Fiegna and A. N. Tallarico

(2022) IEEE ELECTRON DEVICE LETTERS. 43(11). p.1846-1849

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High threshold voltage enhancement-mode regrown p-GaN gate HEMTs with a robust forward time-dependent gate breakdown stability

Shun-Wei Tang, Zhen-Hong Huang, Szu-Chia Chen, Wei-Syuan Lin, Brice de Jaeger, Dirk Wellekens, Matteo Borga, Benoit Bakeroot (UGent) , Stefaan Decoutere and Tian-Li Wu

(2022) IEEE ELECTRON DEVICE LETTERS. 43(10). p.1625-1628

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Journal Article
A1
open access

Compact modeling of nonideal trapping/detrapping processes in GaN power devices

N. Modolo, C. De Santi, Giulio Baratella (UGent) , A. Bettini, M. Borga, N. Posthuma, Benoit Bakeroot (UGent) , S. You, S. Decoutere, A. Bevilacqua, et al.

(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(8). p.4432-4437

Academic Bibliography

prof. dr. Benoit Bakeroot

Substrate network modeling for lateral p-GaN gate HEMTs in a 200V GAN-IC platform

Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs

Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits

Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

Gate reliability of p-GaN power HEMTs under pulsed stress condition

The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs

High threshold voltage enhancement-mode regrown p-GaN gate HEMTs with a robust forward time-dependent gate breakdown stability

Compact modeling of nonideal trapping/detrapping processes in GaN power devices

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