prof. dr. Benoit Bakeroot
- ORCID iD
- 0000-0003-4392-1777
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Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability
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- Journal Article
- A1
- open access
Route toward commercially manufacturable vertical GaN devices
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Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness
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A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination
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- Journal Article
- open access
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
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- Journal Article
- A1
- open access
Role of the GaN-on-Si epi-stack on ΔRON caused by back-gating stress
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Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques
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High-temperature PBTI in trench-gate vertical GaN power MOSFETs : role of border and semiconductor traps
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Using gate leakage conduction to understand positive gate bias induced threshold voltage shift in p-GaN gate HEMTs
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TCAD-based design and verification of the components of a 200 V GaN-IC platform
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- Conference Paper
- C1
- open access
Substrate network modeling for lateral p-GaN gate HEMTs in a 200V GAN-IC platform
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Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
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Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
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Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
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Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits
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Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability
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Gate reliability of p-GaN power HEMTs under pulsed stress condition
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The role of frequency and duty cycle on the gate reliability of p-GaN HEMTs
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High threshold voltage enhancement-mode regrown p-GaN gate HEMTs with a robust forward time-dependent gate breakdown stability
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- Journal Article
- A1
- open access
Compact modeling of nonideal trapping/detrapping processes in GaN power devices
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Study and characterization of GaN MOS capacitors : planar vs trench topographies
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TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
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200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Power ICs
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Stability of Schottky Barrier Diode integrated in p-GaN Enhancement-mode GaN power technology
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Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy
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High-temperature time-dependent gate breakdown of p-GaN HEMTs
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ON-state reliability of GaN-on-Si Schottky Barrier Diodes : Si3N4 vs. Al2O3/SiO2 GET dielectric
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- Journal Article
- A1
- open access
Surface-potential-based compact modeling of p-GaN gate HEMTs
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Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs
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- Journal Article
- A1
- open access
Challenges and perspectives for vertical GaN-on-Si trench MOS reliability : from leakage current analysis to gate stack optimization
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- Journal Article
- A1
- open access
Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+n-n diodes : the road to reliable vertical MOSFETs
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- Journal Article
- A1
- open access
Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells
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Impact of structural and process variations on the time-dependent OFF-state breakdown of p-GaN power HEMTs
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Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics
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Reliability of p-GaN gate HEMTs in reverse conduction
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Demonstration of bilayer gate insulator for improved reliability in GaN-on-Si vertical transistors
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Using RESURF technique for edge termination of semi-vertical GaN devices
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Integration of 650 V GaN power ICs on 200 mm engineered substrates
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- Journal Article
- A1
- open access
Use of Bilayer gate insulator in GaN-on-Si Vertical Trench MOSFETs : impact on performance and reliability
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Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate
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Exploration of gate trench module for vertical GaN devices
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- Journal Article
- A1
- open access
Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors
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- Journal Article
- A1
- open access
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
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- Journal Article
- A1
- open access
Observation of dynamic V-TH of p-GaN Gate HEMTs by fast sweeping characterization
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- Journal Article
- A1
- open access
Surface-potential-based compact model for the gate current of p-GaN Gate HEMTs
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Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications
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GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion
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Trading off between threshold voltage and subthreshold slope in AlGaN/GaN HEMTs with a p-GaN gate
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Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability
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Gate reliability of p-GaN HEMT with gate metal retraction