prof. dr. Benoit Bakeroot
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Investigation on carrier transport through AIN nucleation layer from differently doped Si(111) substrates
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Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination
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The impact of Ti/Al contacts on AlGaN/GaN HEMT vertical leakage and breakdown
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Analytical model for the threshold voltage of ${p}$ -(Al)GaN high-electron-mobility transistors
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Gate conduction mechanisms and lifetime modeling of p-Gate AlGaN/GaN high-electron-mobility transistors
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Dynamic-ron control via proton irradiation in AlGaN/GaN transistors
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Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures
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Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic R-on
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Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
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Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs