An De Vrieze 1 – 2 of 2 publications Show 10 5 10 15 20 50 100 250 Sort by year (new to old) Actions Filter publications News feed Embed this list Save this search Mark all Export Mark journalArticle A1 A comparative study of electrochemically formed and vacuum-deposited n-GaAs/Au Schottky barriers using ballistic electron emission microscopy (BEEM). Stefaan Forment, Roland Vanmeirhaeghe (UGent) , An De Vrieze, Katrien Strubbe (UGent) and Walter Gomes (2001) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 16(12). p.975-981 Mark journalArticle A1 Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers: Influence of surface composition upon the barrier height. An De Vrieze, Katrien Strubbe (UGent) , Walter Gomes, S FORMENT and Roland Vanmeirhaeghe (UGent) (2001) PHYSICAL CHEMISTRY CHEMICAL PHYSICS. 3(23). p.5297-5303
