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InP-based 1300nm microcavity LEDs with 9% quantum efficiency.
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InP 1.3 mu m microcavity LEDs with high quantum efficiency.
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InP 1.3 ?m microcavity LEDs with high quantum efficiency.
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Small-signal analysis of 1.3-mu m microcavity light-emitting diodes.
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INP-based microcavity light emitting diodes emitting diodes emitting at 1. 3 µm and 1. 55 µm.
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High efficiency microcavity LEDs.
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InP-based microcavity LED emitting at 1320 nm with 5% external quantum efficiency.
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InP-based microcavity LED emitting at 1320 nm with 5% external quantum efficiency.
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High quality InGaAs/AlGaAs lasers grown on Ge substrates.
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High quality InGaAs/AlGaAs lasers grown on Ge substrates.
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Planar substrate emitting microcavity light emitting diodes with 20% external QE
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InP microcavity LED emitting at 1.55mm.
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InP-based LED emitting at 1.55mm with 6.8% external QE.
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Microcavity and PBG-related activities at the University of GentCOST 268 Wavelength Scale Photonic Components for Telecommunications (Workshop & Management Committee Meeting), 15-17 March 1999, Stockholm, Sweden,.