Koen Jacobs
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Chemical mapping of V-defects in InGaN MQWs.
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Quantifying the smoothing of GaN epilayers in MOVPE growth by in-situ laser reflectometry.
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Some considerations on the growth of highly resistive GaN layers.
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Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry.
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Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study.
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Intrinsic infrared luminescence from InGaN layers.
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Photoluminescence mapping and Rutherford backscattering of InGaN epilayers.
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Lateral epitaxial overgrowth for GaN-based LEDs
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GaN pendeo-epitaxy.
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OMVPE-based epitaxial lateral overgrowth for GaN LEDs.