Koen Vanhollebeke
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Realization of InAsP compliant substrates for the fabrication of lattice-mismatched InP-based devices
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MOVPE based Zn diffusion into InP and InAsP/InP hetero structures.
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Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD).
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MOVPE based Zn diffusion into InP and InAsP/InGaAs heterostructures.
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Extended wavelength InGaAs detectors grown by metal-organic vapor phase epitaxy (MOVPE) on compliant substrates
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Compliant substrate technology: Integration of mismatched materials for opto-electronic applications.
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Lattice-mismatched InGaAs layers grown by OMVPE on GaAs based compliant substrates.
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Development of compliant substrates for the realization of advanced opto-electronic devices
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InGaAs layers grown by OMVPE on compliant substrates for extended wavelength detectors.
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Growth of InGaAs lattice-mismatched layers on GaAs and InP compliant substratesPresented at the Ninth Biennial Workshop on Organometallic Vapor Phase Epitaxy, 23-27 May 1999, Ponte Vedra Beach, Florida, USA, pp. 11.
(1999)