Academic Bibliography

Search 200 years of publications by Ghent University researchers.

Wim Van der Stricht

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- Journal Article
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The optical and structural properties of InGaN epilayers with very high indium content.

SC BAYLISS, Piet Demeester (UGent) , I FLETCHER, RW MARTIN, PG MIDDLETON, Ingrid Moerman (UGent) , KP O'DONNELL, A SAPELKIN, C TRAGER-COWAN, Wim Van der Stricht, et al.

(1999) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 59(1-3). p.292-297
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- Journal Article
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Confocal microscopy and spectroscopy of InGaN epilayers on sapphire.

KP O'DONNELL, MJ TOBIN, SC BAYLISS and Wim Van der Stricht

(1999) JOURNAL OF MICROSCOPY-OXFORD.
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- Journal Article
- A1
Photoluminescence mapping and Rutherford Backscattering Spectrometry of InGaN epilayers.

KP O'DONNELL, ME WHITE, S PEREIRA, MF WU, A VANTOMME, Wim Van der Stricht and Koen Jacobs

(1999) PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 216(1). p.171-174
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- Journal Article
- A1
Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD.

N DUXBURY, P DAWSON, U BANGERT, EJ THRUSH, Wim Van der Stricht, Koen Jacobs and Ingrid Moerman (UGent)

(1999) PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 216(1). p.355-359
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Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD.

JJ HARRIS, KJ LEE, I HARRISON, LB FLANNERY, D KORAKAKIS, TS CHENG, CT FOXON, Zahia Bougrioua, Ingrid Moerman (UGent) , Wim Van der Stricht, et al.

(1999) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 176(1). p.363-367
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Exciton localization and the Stokes' shift in InGaN epilayers.

RW MARTIN, PG MIDDLETON, KP O'DONNELL and Wim Van der Stricht

(1999) APPLIED PHYSICS LETTERS. 74(2). p.263-265
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- A1
Intrinsic infrared luminescence from InGaN epilayers.

KP O'DONNELL, RW MARTIN, S PEREIRA, A BANGURA, ME WHITE, Wim Van der Stricht and Koen Jacobs

(1999) PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 216(1). p.141-144
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- Conference Paper
- P1
Probing the indium mole fraction in an InGaN epilayer by depth resolved cathodoluminescence.

C TRAGER-COWAN, PG MIDDLETON, A MOHAMMED, KP O'DONNELL, Wim Van der Stricht, Ingrid Moerman (UGent) and Piet Demeester (UGent)

(1998) NITRIDE SEMICONDUCTORS. 482. p.715-718
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- C1
Epitaxial lateral overgrowth of GaN by OMVPE.

Koen Jacobs, Wim Van der Stricht, Ingrid Moerman (UGent) , Piet Demeester (UGent) , Steven Verstuyft (UGent) , K CAEKEBEKE, Peter Van Daele (UGent) , L CONSIDINE and EJ THRUSH

(1998) Proc. of the Third Annual Symposium of the IEEE/LEOS Benelux Chapter, November 26, 1998, Gent, Belgium, pp. 149-152 ; URSI Forum'98, 10 December 1998, Brussels, Belgium, pp. 32..
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- Conference Paper
- C1
InGaN/GaN MQW blue light emitting diodes grown by OMVPE.

Wim Van der Stricht, Koen Jacobs, K CAEKEBEKE, Steven Verstuyft (UGent) , Ingrid Moerman (UGent) , Peter Van Daele (UGent) , Piet Demeester (UGent) , L CONSIDINE and EJ TRUSH

(1998) Proc. of the Third Annual Symposium of the IEEE/LEOS Benelux Chapter, November 26, Gent, Belgium. p.237-240

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