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The dependence of the optical energies on InGaN composition.
(2001) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 82(1-3). p.194-196 -
Elastic strain in InGaN and AlGaN layers
(2000) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 75(2-3). p.232-235 -
Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study.
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Lateral epitaxial overgrowth for GaN-based LEDs
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The optical and structural properties of InGaN epilayers with very high indium content.
(1999) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 59(1-3). p.292-297 -
Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD.
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Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD.
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OMVPE-based epitaxial lateral overgrowth for GaN LEDs.
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Violet-blue InGaN/GaN MQW light emitting diodes on epitaxially laterally overgrown GaN.
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Exciton localization and the Stokes' shift in InGaN epilayers.