Academic Bibliography

Search 200 years of publications by Ghent University researchers.

Wim Van Der Stricht

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- Journal Article
- A1
The dependence of the optical energies on InGaN composition.

KP O'DONNELL, RW MARTIN, C TRAGER-COWAN, ME WHITE, K ESONA, C DEATCHER, PG MIDDLETON, Koen Jacobs, Wim Van Der Stricht, C MERLET, et al.

(2001) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 82(1-3). p.194-196
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Elastic strain in InGaN and AlGaN layers

MF Wu, SD Yao, A Vantomme, S Hogg, G Langouche, Wim Van Der Stricht, Koen Jacobs, Ingrid Moerman (UGent) , J Li and GY Zhang

(2000) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 75(2-3). p.232-235
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- Journal Article
- A1
Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study.

MF WU, A VANTOMME, SM HOGG, G LANGOUCHE, Wim Van Der Stricht, Koen Jacobs and Ingrid Moerman (UGent)

(1999) APPLIED PHYSICS LETTERS. 74(3). p.365-367
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- Journal Article
- A1
Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD.

N DUXBURY, P DAWSON, U BANGERT, EJ THRUSH, Wim Van Der Stricht, Koen Jacobs and Ingrid Moerman (UGent)

(1999) PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 216(1). p.355-359
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- Conference Paper
- C1
Interpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD.

JJ HARRIS, KJ LEE, I HARRISON, LB FLANNERY, D KORAKAKIS, T CHENG, CT FOXON, Zahia Bougrioua, Ingrid Moerman (UGent) , Wim Van Der Stricht, et al.

(1999) Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France.
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- Journal Article
- A1
Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD.

JJ HARRIS, KJ LEE, I HARRISON, LB FLANNERY, D KORAKAKIS, TS CHENG, CT FOXON, Zahia Bougrioua, Ingrid Moerman (UGent) , Wim Van Der Stricht, et al.

(1999) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 176(1). p.363-367
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- Journal Article
- A1
The optical and structural properties of InGaN epilayers with very high indium content.

SC BAYLISS, Piet Demeester (UGent) , I FLETCHER, RW MARTIN, PG MIDDLETON, Ingrid Moerman (UGent) , KP O'DONNELL, A SAPELKIN, C TRAGER-COWAN, Wim Van Der Stricht, et al.

(1999) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 59(1-3). p.292-297
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- Journal Article
- A1
Exciton localization and the Stokes' shift in InGaN epilayers.

RW MARTIN, PG MIDDLETON, KP O'DONNELL and Wim Van Der Stricht

(1999) APPLIED PHYSICS LETTERS. 74(2). p.263-265
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- Conference Paper
- C1
Intrinsic infrared luminescence from InGaN layers.

KP O'DONNELL, RW MARTIN, S PEREIRA, A BANGURA, ME WHITE, Wim Van Der Stricht and Koen Jacobs

(1999) Presented at the 3rd International Conference on Nitride Semiconductors (ICNS3), 4-9 July 1999, Montpellier, France. p.44-45
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- Conference Paper
- C1
OMVPE-based epitaxial lateral overgrowth for GaN LEDs.

Koen Jacobs, Wim Van Der Stricht, Ingrid Moerman (UGent) , Piet Demeester (UGent) , J DE NAEYER, Steven Verstuyft (UGent) and Peter Van Daele (UGent)

(1999) Proceedings of the 8th European Workshop on MOVPE, 8-11 June 1999, Prague, Czech Republic. p.23-26

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