Anja Blondeel
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Uniformity Control in Sputter Deposition Processes.
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Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts.
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Defect analysis of n-type silicon strained layers.
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Tin doping of silicon for controlling oxygen precipitation and radiation hardness.
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Lifetime measurements on Ge wafers for Ge/GaAs solar cells - chemical surface passivation.
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Tin doping effects in silicon
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Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon.
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Tin-related deep levels in proton-irradiated n-type silicon.
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Quantitative optical variants of deep level transient spectroscopy: application to high purity germanium.
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Quantitative spectroscopic determination of defects in germanium
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A BEEM study of PtSi Schottky contacts on ion-milled Si
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Deep defects in n-type high-purity germanium: quantification of optical variants of deep level transient spectroscopy.
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Photoinduced current transient spectroscopy of deep defects in n-type ultrapure germanium.
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Ontwikkeling van optische varianten van Deep Level Transient Spectroscopy voor de karakterisatie van hoog-zuiver n-type germanium
(1998) -
Optical deep level transient spectroscopy of minority carrier traps in n-type high-purity germanium.