Mark D'Hondt
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High quality InGaAs/AlGaAs lasers grown on Ge substrates.
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Study and development of extended wavelength InGaAs detectors
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Low dark current, mismatched InO.82GaO.18As/InAsyPl-y photodetectors for 2.5um wavelength, grown on InP by MOVPE.
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Influence of buffer layer and processing on the dark current of 2.5 mu m-wavelength 2%-mismatched InGaAs photodetectors.
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Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth.
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Dark current reduction for 2.5 µm wavelength, 2% mismatched InGaAs photodetectors, by changing bufferlayer structure and growth temperature
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Characterisation of 2 mismatched InGaAs layers, grown on different buffer- layers and at different growth temperatures
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InGaAsP/InP strained MQW laser with integrated mode size converter using the shadow masked growth technique
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Monolithic integration of a mode size converter with a laser diode using MOVPE shadow masked growth
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Vertically tapered InGaAsP/InP waveguides and lasers resulting in low-loss fibre-chip coupling.