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High-efficiency 650 nm thin-film light-emitting diodes.
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InAlGaP materials and red emitting LEDs on GaAs and Ge substrates
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5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates.
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High-efficiency thin-film light-emitting diodes at 650 nm.
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MOVPE based Zn diffusion into InP and InAsP/InP hetero structures.
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Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD).
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4mW micro cavity LED at 650nm on germanium substrates.
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(Al)GaInP multiquantum well LEDs on GaAs and Ge.
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InAlGaP microcavity LEDs on Ge-substrates
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High efficiency InAlGaP microcavity LEDs on Ge-substrates