Lieve Goubert
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Studie van de invloed van technologisch belangrijke productieprocesstappen op de elektrische eigenschappen van p-InP en n-InxGa1-xAs met behulp van schottkybarrières
(2001) -
A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments.
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A ballistic electron-emission microscopy (BEEM)-investigation of the effects of chemical pretreatments on III-V semiconductor Schottky barriers.
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A study of electrically active defects created in p-InP by CH4:H-2 reactive ion etching.
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A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors.
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An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices.