Show
Sort by
-
Studie van de elektrische eigenschappen van Si/SiO2 strukturen met een ultradunne oxydelaag
(1995) -
Determination of tunnelling parameters in ultra-thin-oxide layer poly-Si/SiO2/Si structures
-
Electrical characteristics of Al/Si02/n-Si tunnel-diodes with an oxide layer grown by rapid thermal-oxidation.
-
Simultaneous elimination of electrically active defects in Si/SiO2 structures by implanted fluorine
-
TUNNEL OXIDES GROWN BY RAPID THERMAL-OXIDATION.
-
A QUANTITATIVE-ANALYSIS OF CAPACITANCE PEAKS IN THE IMPEDANCE OF AL/SIOX/P-SI TUNNEL-DIODES.