prof. dr. ir. Ingrid Moerman
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2DEG mobility in AlGaN-GaN structures grown by LP-MOVPE.
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Material optimisation for AlGaN/GaN HFET applications.
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MOVPE based Zn diffusion into InP and InAsP/InGaAs heterostructures.
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4mW micro cavity LED at 650nm on germanium substrates.
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First demonstration of a 980nm oxide confined laser with integrated spot size converter
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Extended wavelength InGaAs detectors grown by metal-organic vapor phase epitaxy (MOVPE) on compliant substrates
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Substrate-removed 850-nm RCLEDs and small core (63/125 µm) plastic optical fibers for optical data communication
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InP-based PIC for an optical phased array antenna at 1.06 µm
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Realisation of a phased-array multi-wavelength laser using hybridly integrated PICs
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InAlGaP microcavity LEDs on Ge-substrates