prof. dr. ir. Ingrid Moerman
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Low threshold current density InGaAs/AlGaAs DQW asymmetric laser structure with optical trap layer
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Minimising the loss of intersecting waveguides in InP based photonic integrated circuits
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Wet lateral oxidtion of AlGaAs for passive and active guided wave components.
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InP-based microcavity LED emitting at 1320 nm with 5% external quantum efficiency.
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Microcavity LEDs coupled to POF arrays for parallel optical interconnects.
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Germanium as a growth substrate for high quality AlGaAs/InGaAs laser diodes.
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Germanium - The all-purpose substrate of the future?
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High quality InGaAs/AlGaAs lasers grown on Ge substrates.
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Epitaxial lateral overgrowth of GaN by OMVPE.
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Polarization independent InP-based switch with relaxed fabrication tolerances