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Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs
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- Journal Article
- A1
- open access
3D backside integration of FinFETs : is there an impact on LF noise?
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- Journal Article
- A1
- open access
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs
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- Journal Article
- A1
- open access
Refined DC and low-frequency noise characterization at room and cryogenic temperatures of vertically stacked silicon nanosheet FETs
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- Journal Article
- A1
- open access
NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs
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- Journal Article
- A2
- open access
Tunnel-FET evolution and applications for analog circuits
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- Journal Article
- A2
- open access
Performance perspective of Gate-All-Around double nanosheet CMOS beyond high-speed logic applications
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The low-frequency noise behavior of advanced logic and memory devices
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- Journal Article
- A1
- open access
Lifetime assessment of In(x)Ga(1-x)As n-type hetero-epitaxial layers
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Low temperature investigation of n-channel GAA vertically stacked silicon nanosheets
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- Journal Article
- A1
- open access
Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy
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Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy
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A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies
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Frontiers in low-frequency noise research in advanced semiconductor devices
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Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks
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Trap identification on n-channel GAA NW FETs
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Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration
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Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs
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Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities
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A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
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Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers
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Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors
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Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging
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Device performance as a metrology tool to detect metals in silicon
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Electrical activity of extended defects in III-V semiconductors
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A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
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- Journal Article
- A1
- open access
Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates
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- Conference Paper
- P1
- open access
Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction
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Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior
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- Journal Article
- A1
- open access
Low-frequency noise assessment of work function engineering cap layers in high-k gate stacks
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Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates
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On the low-frequency noise of high-kappa gate stacks : what did we learn?
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Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors : physical interpretation of transport phenomena
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Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra
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Bandlike and localized states of extended defects in n-type In0.53Ga0.47As
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Dry passivation process for silicon heterojunction solar cells using hydrogen plasma treatment followed by in situ a-Si:H deposition
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- Journal Article
- A1
- open access
Electrical properties of extended defects in strain relaxed GeSn
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Electrically active defects in plated crystalline silicon n⁺p solar cells : a DLTS perspective
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- Journal Article
- A1
- open access
Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime
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- Journal Article
- A1
- open access
On the evolution of strain and electrical properties in As-grown and annealed Si:P epitaxial films for source-drain stressor applications
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- Journal Article
- A1
- open access
Detailed structural and electrical characterization of plated crystalline silicon solar cells
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- Journal Article
- A1
- open access
Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots
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Study of electron traps associated with oxygen superlattices in n‐type silicon
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- Conference Paper
- P1
- open access
Insights into the reliability of Ni/Cu plated p-PERC silicon solar cells
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- Conference Paper
- P1
- open access
Deep level investigation of InGaAs on InP layer
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Study of recombination characteristics in MOCVD grown GaN epi-layers on Si
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A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice
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Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots
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Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS capacitors
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- Journal Article
- A1
- open access
Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy
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Carrier lifetime spectroscopy for defect characterization in semiconductor materials and devices
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Quasi two-dimensional Si-O superlattices : atomically controlled growth and electrical properties
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Deep levels in silicon-oxygen superlattices
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- Conference Paper
- P1
- open access
Study of electrically active defects in epitaxial layers on silicon
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Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon
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Jan Vanhellemont : 35 years of materials research in microelectronics
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Density and capture cross-section of interface traps in GeSnO2 and GeO2 grown on heteroepitaxial GeSn
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- Journal Article
- A1
- open access
Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam
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Substitutional carbon loss in Si:C stressor layers probed by deep-level transient spectroscopy
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Defect engineering for shallow n-type junctions in germanium : facts and fiction
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Deep levels in W-doped Czochralski silicon
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Impact of the gate material on the deep levels in a-Si:H/c-Si Metal-Insulator-Semiconductor capacitors
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Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices
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Random telegraph noise: the key to single defect studies in nano-devices
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TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs
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Study of defects in In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction diodes for characterizing trap assisted tunneling
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Impact of the gate material on the deep levels in a-Si:H/c-Si metal-insulator-semiconductor capacitors
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Low frequency noise spectroscopy of bulk and border traps in nanoscale devices
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Random telegraph noise: the key to single defect studies in nano-devices
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Analytical techniques for electrically active defect detection
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- Journal Article
- A1
- open access
Electronic properties of manganese impurities in germanium
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Distinction between silicon and oxide traps using single-trap spectroscopy
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Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs
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Defect assessment and leakage control in Ge junctions
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Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode
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Positron annihilation spectroscopy on open-volume defects in group IV semiconductors
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- Journal Article
- A1
- open access
Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications
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- Journal Article
- A1
- open access
Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deeplevel defects in Ge
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- Conference Paper
- C3
- open access
Mn related defect levels in germanium
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Deep levels in W-doped Czochralski silicon
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Deep-level transient spectroscopy study of quenched-in defects in germanium
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On the diffusion and activation of n-type dopants in Ge
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Defect analysis in semiconductor materials based on p-n junction diode characteristics
(2007) Defects and diffusion semiconductors : an annual retrospective IX. In Defect and Diffusion Forum 261-262. p.1-24