ereprof. dr. ir. Roland Vanmeirhaeghe
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In-situ X-ray diffraction measurements for monitoring carbide and silicide phase formation
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Linear growth of Ni2Si thin film on n+/p junction at low temperature
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A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium
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Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium
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Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium
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- Journal Article
- A1
- open access
Solid-state formation of titanium carbide and molybdenum carbide as contacts for carbon-containing semiconductors
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The effect of Schottky metal thickness on barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky diodes
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Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation
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High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation
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Crystallographic and luminescent properties of orthorhombic BaAl2S4: Eu powder and thin films