ereprof. dr. ir. Roland Vanmeirhaeghe
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Effects of the barrier metal thickness and hydrogen pre-annealing on the characteristic parameters of Au/n-GaAs metal-semiconductor Schottky contacts
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Growth kinetics and crystallization behavior of TiO2 films prepared by plasma enhanced atomic layer deposition
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Epitaxial formation of a metastable hexagonal nickel-silicide
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In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon
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Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium
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Yttrium silicide formation and its contact properties on Si(100)
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Metal in-diffusion during Fe and co-germanidation of germanium
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Effect of Pt addition on the stress of NiSi film formed on Si(100).
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Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O
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Fundamentals of intrinsic stress during silicide formation
(2007) Sixth international conference of the Balkan Physical Union. In AIP Conference Proceedings 899. p.453-454