Willy Laflere
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Influence of the growth conditions on the properties of CaS:Eu electroluminescent thin films.
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A DETAILED XPS STUDY OF THE RARE-EARTH COMPOUNDS EUS AND EUF3.
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THE INFLUENCE OF SE-COEVAPORATION ON THE EMISSION-SPECTRA OF CAS-EU AND SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES.
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Hydrogen passivation caused by 'soft' sputter etch cleaning of Si.
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An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices.
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AN XPS STUDY OF THE DOPANTS VALENCE STATES AND THE COMPOSITION OF CAS1-XSEXEU AND SRS1-XSEXCE THIN-FILM ELECTROLUMINESCENT DEVICES.
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A BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) STUDY OF THE BARRIER HEIGHT CHANGE OF AU/N-GAAS SCHOTTKY CONTACTS DUE TO MECHANICAL POLISHING.
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Thin film electroluminescence in SrS:Ce: the quest for blue light
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Electrical characteristics of Al/Si02/n-Si tunnel-diodes with an oxide layer grown by rapid thermal-oxidation.
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Influence of defect passivation by hydrogen on the Schottky-barrier height of GaAs and InP contracts.