Walter Gomes
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Defect luminescence at n-GaN electrodes : a comparative study between n-GaN grown on sapphire substrates and on Si substrates
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On the effect of surface pretreatment upon the electronic structure of n-GaN surfaces
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Photocurrent multiplication at n-GaN electrodes in formic acid solutions
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Subbandgap photoluminescence and electroluminescence at n-GaN electrodes in aqueous solutions
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A (photo-)electrochemical study on n-GaN in aqueous solutions
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Photoluminescence and electroluminescence as tools to investigate recombination processes at n-GaN electrodes in contact with aqueous electrolyte solutions
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Photoelectrochemical reactions at the n-GaN electrode in 1 M H2SO4 and in acidic solutions containing Cl- ions.
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A photoelectrochemical study of InxGa1-xN films
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Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers : influence of surface composition upon the barrier height
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A comparative study of electrochemically formed and vacuum-deposited n-GaAs/Au Schottky barriers using ballistic electron emission microscopy (BEEM).
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Wet etching of III-V semiconductors
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Wet etching of III-V semiconductors
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A photoelectrochemical study of InxGa1-xN films
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Photoanodic dissolution of n-InP : an electrochemical impedance study
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Electrochemistry and photoetching of n-GaN
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On the electrochemical impedance of blocking semiconductor vertical bar electrolyte contacts
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On the electrochemical impedance of InP and GaAs electrodes in indifferent electrolyte, part 1 : analytical description of the frequency dispersion
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On the electrochemical impedance of InP and GaAs electrodes in indifferent electrolyte, part 2 : experimental study of the factors influencing the frequency dispersion
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The electrochemical impedance of one-equivalent electrode processes at dark semiconductor/redox electrodes involving charge transfer through surface states, 2 : the n-GaAs/Fe3+ system as an experimental example
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Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions
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Electroreduction of Co2+ and Ni2+ at III-V semiconductors and properties of the semiconductor/metal interfaces formed
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The electrochemical behavior of p-type (100) GaAs in copper sulfate solution : influence of surface conditions
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The electrochemical impedance of reversible semiconductor electrodes : the n-InP/methylviologen electrode as an example
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On the diffusion impedance at semiconductor electrodes
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An improved procedure for the processing of chronoamperometric data : application to the electrodeposition of Cu upon (100) n-GaAs
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A fundamental study on n- and p-In0.53Ga0.47As in H2O2 solution : electrochemical behavior and selective etching vs. InP
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Electrochemical impedance spectroscopy at semiconductor electrodes : the recombination resistance revisited
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Investigation on the electrochemistry and etching at the (100)GaAs vertical bar HIO3 interface
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Electrochemical reduction vs, vapour deposition for n-GaAs/Cu Schottky-barrier formation : a comparative study
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Electrochemical behaviour of (1 0 0) GaAs in copper(II)-containing solutions
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The etching of InP by acidic iodine solutions : a kinetic and electrochemical study
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Impedance spectroscopy at semiconductor electrodes : review and recent developments
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Chemical and electrochemical interaction of acidic H2O2 solutions with (100) InP
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Etching profiles at InP mask edges : some fundamental aspects
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Fundamental-study on th selective etching of Alo.25Gao.75As versus GaAs in acidic iodine solutions.
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Some fundamental-aspects of profile etching at INP surfaces
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ON THE ETCHING OF INP IN ALKALINE K3FE(CN)6 SOLUTIONS
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An electrochemical investigation on the need for using methanol as a solvent in semiconductor etching
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THE EFFECT OF HIGH LICL CONCENTRATIONS UPON THE COMPETITION BETWEEN ANODIC DECOMPOSITION AND STABILIZATION OF THE N-GAAS/FE2+ ELECTRODE
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BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS : A FUNDAMENTAL-STUDY ON GAP, 1 : ETCHING BEHAVIOR OF N-TYPE AND P-TYPE GAP
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BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS : A FUNDAMENTAL-STUDY ON GAP, 2 : INTERACTION BETWEEN CHEMICAL AND ANODIC ETCHING OF P-TYPE GAP
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THE ANODIC-DISSOLUTION OF INP STUDIED BY THE OPTOELECTRICAL IMPEDANCE METHOD, 2 : INTERACTION BETWEEN ANODIC AND CHEMICAL ETCHING OF INP IN IODIC ACID-SOLUTIONS
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THE ROLE OF WATER ACTIVITY IN THE COMPETITION BETWEEN ANODIC DECOMPOSITION AND STABILIZATION OF THE GAP/FE2+ ELECTRODE
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(PHOTO)ELECTROCHEMISTRY : A SUITABLE TOOL FOR INVESTIGATING WET ETCHING PROCESSES ON III-V SEMICONDUCTORS
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ELECTROCHEMICAL AND ETCHING BEHAVIOR OF INP SINGLE-CRYSTALS IN IODIC ACID-SOLUTIONS
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A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfaces
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Investigation on photoelectrochemical cells based upon silicon/methanol interfaces, part 1 : n-type Si
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Investigation on photoelectrochemical cells based upon silicon/methanol interfaces, part 2 : p-type Si
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Investigation of the C-V behaviour of GaAs-metal and GaAs-electrolyte contacts under forward bias
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Effects of thin oxide layers on the characteristics of GaAs MIS solar cells