Olivier De Gryse
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Determination of oxide precipitate phase and morphology in silicon and germanium using infra-red absorption spectroscopy
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Precipitation and extended defect formation in silicon
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Critical precipitate size revisited and implications for oxygen precipitation in silicon
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Extended defects in silicon: an old and new story
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DLTS studies of high-temperature electron irradiated Cz n-Si
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Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step
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Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon
(2003) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 102(1-3). p.207-212 -
A model for the formation of lattice defects at silicon oxide precipitates in silicon
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A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon
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The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon