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P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type Czochralski silicon
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DLTS studies of high-temperature electron irradiated Cz n-Si
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Characterization of deep defects in CdS/CdTe thin film solar cells using deep level transient spectroscopy
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Analysis of oxygen thermal donor formation in n-type Cz silicon
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Characterization of deep defects in CdS/CdTe thin film solar cells using Deep Level Transient Spectroscopy
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Characterisation of deep defects in CdS/CdTe thin solar cells using Deep Level Transient Spectroscopy
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Analysis of thermal donor formation in n-type CZ silicon
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Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon
(2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 42(12). p.7184-7188 -
DLTS and admittance measurements on CdS/CdTe solar cells
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Microoptical characterization of electroluminescent SrS: Cu,Ag thin films by photo- and cathodoluminescence observations.