Joris Van Campenhout
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110 GHz GeSi electroabsorption modulator on a 300mm SiPh platform enabling high-density 400G/lane IM/DD links
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70 GHz, 2 A/W, waveguide-coupled germanium-in-silicon avalanche photodiode
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320 Gb/s unamplified transmission using 100 GHz Ge PD and TFLN MZM on a foundry-compatible SiPh platform co-packaged with traveling-wave drivers and TIAs
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Leakage mechanisms of sub-pA InGaAs/GaAs nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer
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High speed transceivers beyond 1.6Tb/s for data center networks
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- Journal Article
- A1
- open access
Wafer‐scale integration of single layer graphene electro‐absorption modulators in a 300 mm CMOS pilot line
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- Conference Paper
- C1
- open access
Design of a broadband adiabatic coupler for interfacing PICs to optical redistribution layers
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- Journal Article
- A1
- open access
Unique design approach to realize an O-band laser monolithically integrated on 300 mm Si substrate by nano-ridge engineering
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Low dark current and high responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer
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- Journal Article
- A1
- open access
Silicon circuits for chip-to-chip communications in multi-socket server board interconnects