Koen Jacobs
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Formation of metallic In in InGaN/GaN multiquantum wells
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Determination of crystal misorientation in epitaxial lateral overgrowth of GaN.
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Investigation on p-contacts in Mg-doped GaN and the effect of various pre-treatments.
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Suppression of rare-earth implantation-induced damage in GaN
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Epitaxial lateral overgrowth of GaN on sapphire - An examination of epitaxy quality using synchrotron X-ray topography.
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The dependence of the optical energies on InGaN composition.
(2001) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 82(1-3). p.194-196 -
Chemical mapping of InGaN MQWs.
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White beam synchroton x-ray topography and x-ray diffraction measurements of epitaxial lateral overgrowth of GaN.
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Material optimisation for AlGaN/GaN HFET applications.
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Elastic strain in InGaN and AlGaN layers
(2000) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 75(2-3). p.232-235