Academic Bibliography

Search 200 years of publications by Ghent University researchers.

Bart Depreter

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InP 1.3 mu m microcavity LEDs with high quantum efficiency.

Bart Depreter, Ingrid Moerman (UGent) , Roel Baets (UGent) , Peter Van Daele (UGent) and Piet Demeester (UGent)

(2000) JOURNAL OF CRYSTAL GROWTH. 221. p.674-678
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InP-based 1300nm microcavity LEDs with 9% quantum efficiency.

Bart Depreter, Ingrid Moerman (UGent) , Roel Baets (UGent) , Peter Van Daele (UGent) and Piet Demeester (UGent)

(2000) ELECTRONICS LETTERS. 36(15). p.1303-1304
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- Conference Paper
- C1
InP 1.3 ?m microcavity LEDs with high quantum efficiency.

Bart Depreter, Ingrid Moerman (UGent) , Roel Baets (UGent) , Peter Van Daele (UGent) and Piet Demeester (UGent)

(2000) The Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X), 5-9 June 2000, Sapporo, Japan. p.234-235
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Small-signal analysis of 1.3-mu m microcavity light-emitting diodes.

P LANDAIS, B ROYCROFT, A SHAW, Bart Depreter, Ingrid Moerman (UGent) and J HEGARTY

(1999) IEEE PHOTONICS TECHNOLOGY LETTERS. 11(11). p.1342-1344
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INP-based microcavity light emitting diodes emitting diodes emitting at 1. 3 µm and 1. 55 µm.

Bart Depreter, Steven Verstuyft (UGent) , Ingrid Moerman (UGent) , Roel Baets (UGent) and Peter Van Daele (UGent)

(1999) Proceedings on the Eleventh Conference on Indium Phosphide and Related Materials (IPRM 99), ISBN 0-7803-5562-8, 16-20 May 1999, Davos, Switzerland. p.227-230
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High efficiency microcavity LEDs.

Ronny Bockstaele, Bart Depreter, Johan Blondelle, Bart Dhoedt (UGent) , Ingrid Moerman (UGent) , Piet Demeester (UGent) , Peter Van Daele (UGent) and Roel Baets (UGent)

(1998) (Invited) CLEO/Europe'98 Conference on Lasers and Electro-Optics-Europe, IEEE cat. 98TH8326, Vol. CWA, Nr. 1, 14-18 September Glasgow, Scotland, United Kingdom, pp. 141.
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InP-based microcavity LED emitting at 1320 nm with 5% external quantum efficiency.

Bart Depreter

(1998) URSI Forum 1998. 10 December. Brussels, Belgium. p.17-20
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- C1
InP-based microcavity LED emitting at 1320 nm with 5% external quantum efficiency.

Bart Depreter, Steven Verstuyft (UGent) , Ingrid Moerman (UGent) , Roel Baets (UGent) and Peter Van Daele (UGent)

(1998) Proc. of the Third Annual Symposium of the IEEE/LEOS Benelux Chapter, November 26, Gent, Belgium. p.77-80
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High quality InGaAs/AlGaAs lasers grown on Ge substrates.

Mark D'Hondt, Zong-Qiang Yu (UGent) , Bart Depreter, Carl Sys (UGent) , Ingrid Moerman (UGent) , Piet Demeester (UGent) and P MIJLEMANS

(1998) The Ninth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE IX), 31 May - 4 June La Jolla, California.
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- Journal Article
- A1
High quality InGaAs/AlGaAs lasers grown on Ge substrates.

Mark D'Hondt, Zong-Qiang Yu (UGent) , Bart Depreter, Carl Sys (UGent) , Ingrid Moerman (UGent) , Piet Demeester (UGent) and P MIJLEMANS

(1998) JOURNAL OF CRYSTAL GROWTH. 195(1-4). p.655-659

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