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- Journal Article
- A1
- open access
Refined analysis of the correlated carrier number and mobility fluctuations mechanism in MOSFETs
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- Journal Article
- A2
- open access
Lateral PIN photodiode with germanium and silicon layer on SOI wafers
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- Journal Article
- A1
- open access
Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?
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- Journal Article
- A1
- open access
Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs
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- Journal Article
- A1
- open access
3D backside integration of FinFETs : is there an impact on LF noise?
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- Journal Article
- A1
- open access
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs
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- Journal Article
- A1
- open access
Refined DC and low-frequency noise characterization at room and cryogenic temperatures of vertically stacked silicon nanosheet FETs
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- Journal Article
- A1
- open access
NH3 PDA temperature-impact on low-frequency noise behavior of Si0.7Ge0.3 pFinFETs
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- Journal Article
- A2
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Tunnel-FET evolution and applications for analog circuits
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- Journal Article
- A2
- open access
Performance perspective of Gate-All-Around double nanosheet CMOS beyond high-speed logic applications