Academic Bibliography

Search 200 years of publications by Ghent University researchers.

prof. ir. Eddy Simoen

Faculty of Sciences > Department of Solid state sciences

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Model and parameter extraction strategy impact on the estimated values of MOSFET parameters in ohmic operation

Abderrahim Tahiat, Bogdan Cretu, Anabela Veloso and Eddy Simoen (UGent)

(2026) SOLID-STATE ELECTRONICS. 231.
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Exploration and insights into vertical nanowire/sheet FETs for ultimate scaled circuits/systems

Anabela Veloso, Bjorn Vermeersch, Abderrahim Tahiat, Philippe Matagne, Adrian Chasin, Barry O'Sullivan, Ruben Asanovski, Bogdan Cretu, Eddy Simoen (UGent) , Roger Loo (UGent) , et al.

(2025) 2025 International Conference on Solid State Devices and Materials, Abstracts.
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- Journal Article
- A1
- open access
Novel Y-function methodology parameter estimation from weak to strong inversion operation

A. Tahiat, B. Cretu, A. Veloso and Eddy Simoen (UGent)

(2025) SOLID-STATE ELECTRONICS. 225.
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- Journal Article
- A1
- open access
Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K

A. Tahiat, B. Cretu, A. Veloso and Eddy Simoen (UGent)

(2025) SOLID-STATE ELECTRONICS. 225.
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- Conference Paper
- C3
- open access
DLTS assessment of grown-in defects in hetero-epitaxial gate stacks for stacked silicon nanosheet channels

Eddy Simoen (UGent) , Samira Khelifi (UGent) , Henk Vrielinck (UGent) , A. Akula and Roger Loo (UGent)

(2024) GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XX.
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- Journal Article
- A1
- open access
Refined analysis of the correlated carrier number and mobility fluctuations mechanism in MOSFETs

Bogdan Cretu, Abderrahim Tahiat, Anabela Veloso and Eddy Simoen (UGent)

(2024) IEEE TRANSACTIONS ON ELECTRON DEVICES. 71(10). p.5860-5866
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- Journal Article
- A2
- open access
Lateral PIN photodiode with germanium and silicon layer on SOI wafers

Fábio A. Silva, Rodrigo T. Doria, Eddy Simoen (UGent) and M. G. C. Andrade

(2023) JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS. 18(2).
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- Journal Article
- A1
- open access
Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?

A. Tahiat, B. Cretu, A. Veloso and Eddy Simoen (UGent)

(2023) SOLID-STATE ELECTRONICS. 209.
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- Journal Article
- A1
- open access
Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs

Hongyue Wang, Eddy Simoen (UGent) , Lei Ge, Yuebo Liu, Chang Liu, Mingsheng Xu, Yijun Shi, Zongqi Cai, Yan Peng, Xiwei Wang, et al.

(2023) DIAMOND AND RELATED MATERIALS. 138.
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- Journal Article
- A1
- open access
3D backside integration of FinFETs : is there an impact on LF noise?

Eddy Simoen (UGent) , Anne Jourdain, Cor Claeys and Anabela Veloso

(2023) SOLID-STATE ELECTRONICS. 207.

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