Academic Bibliography

Search 200 years of publications by Ghent University researchers.

prof. ir. Eddy Simoen

Faculty of Sciences > Department of Solid state sciences

Work address: Krijgslaan 281, S1
9000 Gent
Email: Eddy.Simoen@UGent.be

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Defect characterization in high-electron-mobility transistors with regrown p-GaN gate by low-frequency noise and deep-level transient spectroscopy

Po-Chun Hsu, Eddy Simoen (UGent) , Hu Liang, Brice De Jaeger, Benoit Bakeroot (UGent) , Dirk Wellekens and Stefaan Decoutere

(2021) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 218(23).
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A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies

A. Vais, B. Hsu, O. Syshchyk, H. Yu, A. Alian, Y. Mols, V Kodandarama, K., B. Kunert, N. Waldron, Eddy Simoen (UGent) , et al.

(2021) 2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). In International Reliability Physics Symposium
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Frontiers in low-frequency noise research in advanced semiconductor devices

Eddy Simoen (UGent) , Anabela Veloso, Barry O'Sullivan, Kenichiro Takakura and Cor Claeys

(2021) 2021 China Semiconductor Technology International Conference (CSTIC).
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Interfacial properties of nMOSFETs with different Al2O3 capping layer thickness and TiN gate stacks

Danghui Wang, Tianhan Xu, Eddy Simoen (UGent) , Bogdan Govoreanu, Cor Claeys and Yang Zhang

(2021) IEEE TRANSACTIONS ON ELECTRON DEVICES. 68(3). p.948-953
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Trap identification on n-channel GAA NW FETs

A. Bordin, B. Cretu, R. Carin, Eddy Simoen (UGent) , G. Hellings, D. Linten and C. Claeys

(2020) 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Proceedings.
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Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration

Hongyue Wang, Po-Chun Hsu, Ming Zhao, Eddy Simoen (UGent) , Arturo Sibaja-Hernandez and Jinyan Wang

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(11). p.4827-4833
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Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs

Duan Xie, Eddy Simoen (UGent) , Haifeng Chen, Hiroaki Arimura and Naoto Horiguchi

(2020) IEEE TRANSACTIONS ON ELECTRON DEVICES. 67(11). p.4713-4719
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Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities

Bogdan Cretu, Beya Nafaa, Eddy Simoen (UGent) , Geert Hellings, Dimitri Linten and Cor Claeys

(2020) ECS Transactions. 97(5). p.45-51
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A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

P.-C. Hsu, Eddy Simoen (UGent) , D. Lin, A. Stesmans, L. Goux, R. Delhougne, P. Carolan, H. Bender and G. S. Kar

(2020) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 9(4).
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Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers

C. Claeys, P.-C. Hsu, Y. Mols, H. Han, H. Bender, F. Seidel, P. Carolan, C. Merckling, A. Alian, N. Waldron, et al.

(2020) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 9(3).

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