Academic Bibliography

Search 200 years of publications by Ghent University researchers.

prof. ir. Eddy Simoen

Faculty of Sciences > Department of Solid state sciences

Work address: Krijgslaan 281, S1
9000 Gent
Email: Eddy.Simoen@UGent.be

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Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities

Bogdan Cretu, Beya Nafaa, Eddy Simoen (UGent) , Geert Hellings, Dimitri Linten and Cor Claeys

(2020) ECS Transactions. 97(5). p.45-51
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A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

P.-C. Hsu, Eddy Simoen (UGent) , D. Lin, A. Stesmans, L. Goux, R. Delhougne, P. Carolan, H. Bender and G. S. Kar

(2020) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 9(4).
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Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers

C. Claeys, P.-C. Hsu, Y. Mols, H. Han, H. Bender, F. Seidel, P. Carolan, C. Merckling, A. Alian, N. Waldron, et al.

(2020) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 9(3).
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Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors

Chong Wang (UGent) , Ming Zhao, Wei Li and Eddy Simoen (UGent)

(2019) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 216(17).
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Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging

Po-Chun (Brent) Hsu, Han Han, Eddy Simoen (UGent) , Clement Merckling, Geert Eneman, Yves Mols, Nadine Collaert and Marc Heyns

(2019) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 216(17).
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Device performance as a metrology tool to detect metals in silicon

Cor Claeys and Eddy Simoen (UGent)

(2019) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 216(17).
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Electrical activity of extended defects in III-V semiconductors

Eddy Simoen (UGent) , P-C Hsu, Yves Mols, Bernardette Kunert, Robert Langer, Clement Merckling, AliReza Alian, Niamh Waldron, Geert Eneman, Nadine Collaert, et al.

(2019) ECS Transactions. 92(4). p.21-31
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A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors

P-C Hsu, Eddy Simoen (UGent) , D Lin, A Stesmans, L Goux, R Delhougne and GS Kar

(2019) ECS Transactions. 92(1). p.45-55
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- Journal Article
- A1
- open access
Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates

Eddy Simoen (UGent) , Po-Chun (Brent) Hsu, A Alian, S El Kazzi and C Wang

(2019) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 34(7).
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- Conference Paper
- P1
- open access
Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction

PC (Brent) Hsu, Eddy Simoen (UGent) , G Eneman, C Merckling, A Alian, R Langer, N Collaert and M Heyns

(2019) Journal of Physics : Conference Series. 1190.

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