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0000-0002-8992-4685
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Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs
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- PhD Thesis
- open access
Reliability assessment and lifetime modelling of p-GaN gate AlGaN/GaN high-electron-mobility transistors
(2020) -
- Journal Article
- A1
- open access
ESD-failure of E-mode GaN HEMTs : role of device geometry and charge trapping
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Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization
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Threshold voltage instability mechanisms in p-GaN gate AlGaN/GaN HEMTs
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Comparison of copper electroplating, copper wet etching and linear sweep voltammetry as techniques to investigate the porosity of atomic layer deposited Al2O3
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Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors
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A physical-statistical approach to AlGaN/GaN HEMT reliability
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Mu s-range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate
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The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors