prof. Roger Loo

Understanding and modeling the impact of defects on electrical characteristics of Si/SiGe heterostructures at cryo temperatures

B. Veryser, F. Stampfl, J.M. Gonzalez-Medina, C. Godfrin, B. Raes, K. De Greve, Roger Loo (UGent) , Y. Shimura, L. Panarella, A. Grill, et al.

(2026) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. p.1-9

Add to list

Formation and texture of Y silicides in annealed TiN/Y thin films on Si substrates

Bert Pollefliet, Clement Porret, Alex Merkulov, Roger Loo (UGent) , Christophe Detavernier (UGent) , André Vantomme and Clement Merckling

(2026) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 214.

Add to list

360 Gbps Ge-on-Si avalanche photodiodes operating in the O- and C-band

Amir Khaled Abdelhamid Mohamed Shahin (UGent) , Conor Coughlan, Cédric Bruynsteen (UGent) , Mathias Berciano, Didit Yudistira, Roger Loo (UGent) , Hakim Kobbi, Leandro Da Silva (UGent) , Nishant Singh (UGent) , Peter Verheyen, et al.

(2026) 2026 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC.

Add to list

A Ge/Si photodiode exceeding 110 GHz with 0.9 A/W, low capacitance and operating at -0.5 V for O and C-band applications

Conor Coughlan, Amir Khaled Abdelhamid Mohamed Shahin (UGent) , Mathias Berciano, Hakim Kobbi, Shalini Shalini Jakanadan, Roger Loo (UGent) , Cédric Bruynsteen (UGent) , Jakob Declercq (UGent) , Minkyu Kim, Swetansu Bipul, et al.

(2026) 2026 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC.

Add to list

Journal Article
A1
open access

CFET channel stack fabrication by wafer-to-wafer bonding and BESOI donor dismounting

P. Tchoulfian, D. Barge, J.M. Hartmann, S. Kerdilès, V. Larrey, F. Fournel, V. Loup, P. Hauchecorne, A.M. Papon, A. Thouvard, et al.

(2026) MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 214.

Add to list

Journal Article
A1
open access

High-performance thermally-robust C-band GeSi FK electro-absorption modulators on 300-mm silicon photonics platform

Dharmander Malik, Minkyu Kim, Hakim Kobbi, Conor Coughlan, Zohauddin Ahmad, Mathias Berciano, Guy Lepage, Roger Loo (UGent) , Huseyin Sar, Swetanshu Bipul, et al.

(2026) OPTICS EXPRESS. 34(11). p.19467-19477

Add to list

Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays

Arne Loenders, Jacques Van Damme, Clement Godfrin, Paola Favia, Jacopo Franco, Thomas Van Caekenberghe, Bart Raes, Gulzat Jaliel, Sylvain Baudot, Luis Francisco Pinotti, et al.

(2026) SCIENCE ADVANCES.

Add to list

Terman method to study threshold voltage hysteresis of Si/SiGe heterostructures at cryogenic temperatures

B. Veryser, F. Stampfl, J.M. Gonzalez-Medina, C. Godfrin, B. Raes, D. Wan, K. De Greve, Roger Loo (UGent) , Y. Shimura, L. Panarella, et al.

(2026) 2026 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2026. In International Reliability Physics Symposium p.1-6

Add to list

Journal Article
A1
open access

Anisotropic crystallization of orthorhombic ScSi on Si(001) substrates

Bert Pollefliet, Clement Porret, Jean-Luc Everaert, Kiroubanand Sankaran, Olivier Richard, Han Han, Roger Loo (UGent) , Christophe Detavernier (UGent) , André Vantomme and Clement Merckling

(2026) APL MATERIALS. 14(4).

Add to list

Journal Article
A2
open access

Rapid autotuning of a SiGe quantum dot into the single-electron regime with machine learning and RF-reflectometry FPGA-based measurements

Marc-Antoine Roux, Joffrey Rivard, Victor Yon, Alexis Morel, Dominic Leclerc, Claude Rohrbacher, El Bachir Ndiaye, Felice Francesco Tafuri, Brendan Bono, Stefan Kubicek, et al.

(2026) IEEE TRANSACTIONS ON QUANTUM ENGINEERING. 7.

Academic Bibliography

prof. Roger Loo

Understanding and modeling the impact of defects on electrical characteristics of Si/SiGe heterostructures at cryo temperatures

Formation and texture of Y silicides in annealed TiN/Y thin films on Si substrates

360 Gbps Ge-on-Si avalanche photodiodes operating in the O- and C-band

A Ge/Si photodiode exceeding 110 GHz with 0.9 A/W, low capacitance and operating at -0.5 V for O and C-band applications

CFET channel stack fabrication by wafer-to-wafer bonding and BESOI donor dismounting

High-performance thermally-robust C-band GeSi FK electro-absorption modulators on 300-mm silicon photonics platform

Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays

Terman method to study threshold voltage hysteresis of Si/SiGe heterostructures at cryogenic temperatures

Anisotropic crystallization of orthorhombic ScSi on Si(001) substrates

Rapid autotuning of a SiGe quantum dot into the single-electron regime with machine learning and RF-reflectometry FPGA-based measurements

Contents

Support

Contact