- Work address
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Krijgslaan 281, S1
9000 Gent - Jonas.Keukelier@UGent.be
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The Trap-Dominated Conduction Mechanism in Ge-Se Selectors, Studied at Cryogenic Temperatures
(2022) -
Plasma-enhanced atomic layer deposition of nickel and cobalt phosphate for lithium ion batteries
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- Journal Article
- A1
- open access
Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements
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- Miscellaneous
- open access
Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2 (vol 35, pg 151, 2020)
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- Journal Article
- A1
- open access
Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2
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Converting molecular layer deposited alucone films into Al2O3/alucone hybrid multilayers by plasma densification
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- Journal Article
- A1
- open access
Ovonic threshold-switching GexSey chalcogenide materials : stoichiometry, trap nature, and material relaxation from first principles
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- Conference Paper
- C1
- open access
Doped and un-doped GeSe2 for OTS : Raman spectroscopy and electrical measurements