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Study of SiGeAsTe and SiGeAsSe chalcogenide thin films by Raman spectroscopy and understanding of their OTS properties
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Chalcogenide thin films and their application in threshold switching selector devices
(2024) -
- Conference Paper
- C3
- open access
The trap-dominated conduction mechanism in Ge-Se selectors, studied at cryogenic temperatures
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- Journal Article
- A1
- open access
Plasma-enhanced atomic layer deposition of nickel and cobalt phosphate for lithium ion batteries
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- Conference Paper
- C3
- open access
Converting molecular layer deposited alucone films into Al2O3/alucone hybrid multilayers by plasma densification
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- Journal Article
- A1
- open access
Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements
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- Miscellaneous
- open access
Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2 (vol 35, pg 151, 2020)
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- Journal Article
- A1
- open access
Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2
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Converting molecular layer deposited alucone films into Al2O3/alucone hybrid multilayers by plasma densification
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- Journal Article
- A1
- open access
Ovonic threshold-switching GexSey chalcogenide materials : stoichiometry, trap nature, and material relaxation from first principles