prof. dr. ir. Günther Roelkens
work address
Technologiepark Zwijnaarde 15, iGent
9052 Zwijnaarde
9052 Zwijnaarde
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- 2017
- Widely tunable 2.3 um InP-based type-II DFB laser array heterogeneously integrated in silicon for sensing
- GaSb SLDs and gain-chips for sensing applications in the 2-2.5 micron wavelength range
- Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance
- Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits
- III-V-on-silicon three-section DBR laser with over 12 nm continuous tuning range
- 43 Gb/s NRZ-OOK Direct Modulation of a Heterogeneously Integrated InP/Si DFB Laser
- Unidirectional, widely-tunable and narrow-linewidth heterogeneously integrated III-V-on-silicon laser
- CMOS-compatible broadband co-propagative stationary Fourier transform spectrometer integrated on a silicon nitride photonics platform
- A III-V-on-Si ultra-dense comb laser
- Design of an 845-nm GaAs Vertical-Cavity Silicon-Integrated Laser with an Intracavity Grating for Coupling to a SiN Waveguide Circuit